Infineon and Siemens leverage silicon carbide technology to advance electrical protection in data centers and factories
Infineon Technologies and Siemens are partnering to integrate silicon carbide power modules into Siemens' new semiconductor circuit breakers for faster, more reliable electrical protection in data centers, factories, an…
- up to 1000x faster than traditional breakers
- 1200 V
What Happened
Infineon Technologies AG and Siemens AG are partnering to advance electrical protection in data centers, production facilities, and battery storage systems. Under the collaboration, Infineon will supply its 62 mm CoolSiC™ MOSFET module 1200 V to Siemens for use in its SENTRON 3QD2 semiconductor circuit breakers, enhancing efficiency, power density, and reliability.
- Millisecond range
- Microsecond range (up to 1000x faster)
“AI data centers and factories are becoming increasingly electrified and complex. This increases vulnerability to electrical failures and drives the demand for more sustainable, efficient and reliable power distribution systems.”
Why this matters
This collaboration brings ultrafast circuit interruption that is up to 1,000 times quicker than traditional breakers, reducing costly downtime and damage in critical power environments like AI data centers and industrial plants.
Terms in This Story
- semiconductor circuit breaker
- An electronic device that protects circuits from damage by interrupting excessive current flow using semiconductor components, operating much faster than traditional mechanical breakers.
- silicon carbide (SiC)
- A wide-bandgap semiconductor material that allows power devices to operate at higher voltages, temperatures, and frequencies than traditional silicon, improving efficiency and power density.
Summarised from the linked release; details can be imperfect — always verify against the original source.